4351. Gallium Nitride

Nomenclature

CAS number: 25617-97-4
Gallium mononitride.
GaN; mol wt 83.73.
Ga 83.27%, N 16.73%.

Description and references

Semiconductor material. Prepn: W. C. Johnson et al., J. Phys. Chem. 36, 2651 (1932); and wurtzite structure determn: R. Juza, H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938). Prepn of single crystalline GaN by vapor deposition: H. P. Maruska, J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969). Luminescence studies: H. G. Grimmeiss, H. Koelmans, Z. Naturforsch. 14a, 264 (1959). P-type doping: H. Amano et al., Jpn. J. Appl. Phys. 28, L2112 (1989). Fabrication of blue light emitting diodes (LEDs): S. Nakamura et al., ibid. 30, L1998 (1991). Potential use of GaN LEDs in phototherapy for jaundice: D. S. Seidman et al., J. Pediatr. 136, 771 (2000). Review of properties and crystal growth techniques: S. Strite, H. Morko, J. Vac. Sci. Technol. B 10, 1237-1266 (1992); and applications: S. Keller, S. P. Denbaars, Curr. Opin. Solid State Mater. Sci. 3, 45-50 (1997); S. J. Pearton et al., Materials Today 5, 24-31 (June, 2002); of thin film growth techniques and optical properties: R. F. Davis et al., Proc. IEEE 90, 993-1004 (2002).

Properties

Equilibrium crystal structure is hexagonal wurtzite; lattice constants at 300 K: a = 3.189 ; c = 5.185 . Less thermodynamically stable cubic zinc blende structures can be grown on cubic substrates; lattice constant a = 4.503 . mp 2500° (2800 K). Thermal conductivity: 1.3 W/cm K. Bandgap at 300 K: 3.39 eV. n (1 eV) = 2.33. n (3.38 eV) = 2.67. Exceedingly chemically and thermally stable. Insol in H2O, acids, and bases at room temp. Dissolves slowly in hot alkalis.

Use

Blue and UV light emitter with applications in semiconductor devices including: LEDs, laser diodes, lighting, displays, and data storage.