4951. Indium Nitride

Nomenclature

CAS number: 25617-98-5
Indium mononitride.
InN; mol wt 128.82.
In 89.13%, N 10.87%.

Description and references

Semiconductor material. Prepn and structure determn: R. Juza, H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938). Low-temperature organometallic chemical vapor deposition: R. A. Fischer et al., Chem. Mater. 8, 1356 (1996). Prepn and characterization of nanocrystalline forms: J. Xiao et al., Inorg. Chem. 42, 107 (2003). Physical properties of films: G. V. Samsonov, A. F. Andreeva, Sci. Sintering 12, 155 (1980). Thermal properties: S. Krukowski et al., J. Phys. Chem. Solids 59, 289 (1998). Optical and electronic properties: V. V. Sobolev, M. A. Zlobina, Semiconductors 33, 385 (1999).

Properties

Usually crystallizes as a hexagonal wurtzite lattice. Tdec 427-550°. mp ≈1900°. Bandgap = 1.89 eV. n (4.80 eV) = 2.78. d 6.78±0.05.

Use

In manuf of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.