Nomenclature
CAS number: 22398-80-7
InP; mol wt 145.79.
In 78.76%, P 21.25%.
Description and references
Prepd from white phosphorus and indium iodide
at 400°: Thiel, Koelsch, Z. Anorg. Chem. 66, 319 (1910); from phosphorus vapor and heated indium
metal: Jandelli, Gazz. Chim. Ital. 71, 58 (1941). Synthesis in zone melting furnace at
1010° from a non-stoichiometric melt: Minden, Sylvania Technol. 11, no. 1, 18 (Jan. 1958).
Properties
Brittle mass with metallic appearance, not easily
attacked by mineral acids. mp 1070°. Dielectric constant: 10.8. Energy gap: 1.3
ev at 25°. Electron mobility: approx 4600 cm2/volt-sec.
Hole mobility: approx 150 cm2/volt-sec. Solid solns
of InP can cover the energy gap continuously from 0.3 to 1.3 ev.
Rectification has been observed in InP although it is more characteristic
of a Schottky type barrier than the minority carrier injection phenomenon
observed in germanium.Use
In electronics for research on semiconductors.