Nomenclature
CAS number: 24304-00-5
AlN; mol wt 40.99.
Al 65.82%, N 34.17%.
Description and references
Semiconductor material. Prepn: F. Briegleb,
A. Geuther, Ann. 123, 228 (1862). Lattice structure: H. Ott, Z. Physik. 22, 201 (1924). Crystal structure:
G. A. Jeffrey, G. S. Parry, J. Chem. Phys. 23, 406 (1953). Prepn of AlN films by laser-induced
chemical vapor deposition: X. Li, T. L. Tansley, J. Appl. Phys. 68, 5369 (1990). Review of
growth of high purity crystals: G. A. Slack, T. F. McNelly, J. Cryst. Growth 34, 263-279 (1976);
of prepn and properties: D. D. Marchant, T. E. Nemecek, Adv. Ceram. 26, 19-54 (1989);
of properties and applications: B. H. Mussler, Am. Ceram. Soc. Bull. 79, 45-47 (2000).
Properties
Colorless, translucent material; crystallizes
with a hexagonal wurtzite structure. Bandgap at room temp: 6.2 eV.
d 3.26. Hardness no.
8 on Mohs' scale. mp 2400° (dec). Thermal conductivity at 300 K: 3.19 W/cm K. Specific
heat: 738 ±20 J/kgK.Use
In semiconductor electronics; in steel manuf. AlN
components and substrates are used in electrical engines, microelectronics,
naval radio and defense systems, railway transport systems, telecommunications
and research satellites, and emission control systems.