Nomenclature
CAS number: 1312-41-0
InSb; mol wt 236.58.
In 48.53%, Sb 51.47%.
Description and references
Prepd by melting together stoichiometric amounts
of indium and antimony in evacuated ampuls or in zone-refining apparatus:
Kleppa, J. Am. Chem. Soc. 77, 897 (1955); Harmon, J. Electrochem.
Soc. 103, 128 (1956). Reviews:
Welker, Weiss in Solid State Physics vol. 3 (Academic Press, New York, 1956); Minden, Sylvania Technol. 11, no. 1, 13-25
(Jan. 1958); Hulme, Mullin, Solid State Electron. 5 (Pergamon Press, 1962) 211-247.
Properties
Crystals (zinc blende structure). mp 535°. d at mp 5.74 (solid); 6.48 (liq). Dielectric constant = 15.9. Energy gap at 25° = 0.18 ev. Hole
mobility 1250 cm2/volt-sec. Electron mobility approx 80,000
cm2/volt-sec.Use
In semiconductor electronics. Grown p-n junctions
have been made by doping a melt with an acceptor impurity such as
zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions
have also been made. Broad-area surface junctions have been produced
by out-diffusing antimony in vacuum from the surface of an n-type
crystal, producing a p-n junction just inside the surface. Also has
photoconductive, photoelectromagnetic, and magnetoresistive properties.
Useful as an infrared detector and filter, and in Hall effect devices.