Nomenclature
CAS number: 1303-11-3
AsIn; mol wt 189.74.
As 39.49%, In 60.51%.
InAs.
Description and references
Prepd by fusion of the elements in an evacuated,
sealed tube: Gans et al., Compt.
Rend. 237, 310 (1953); Talley, Enright, Phys. Rev. 94, 1931 (1954); Harmon et al., ibid. 104, 1562 (1956); Minden, Sylvania Technol. 11, no. 1, 17 (Jan. 1958).
Properties
Metallic appearance. Small single crystals have
been grown by a modification of the Czochralski technique: Gremmelmaier, Z. Naturforsch. 11A, 463 (1956).
mp 943°. Hardly
attacked by mineral acids. Energy gap: 0.35 ev. Electron mobility:
approx 33,000 cm2/volt-sec. Hole mobility: 460 cm2/volt-sec. Dielectric constant 11.7.Use
In semiconductor electronics.